BSC160N10NS3GATMA1
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Infineon Technologies BSC160N10NS3GATMA1

Manufacturer No:
BSC160N10NS3GATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSC160N10NS3GATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 8.8A/42A TDSON
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:8.8A (Ta), 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:16mOhm @ 33A, 10V
Vgs(th) (Max) @ Id:3.5V @ 33µA
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1700 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):60W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-1
Package / Case:8-PowerTDFN
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Similar Products

Part Number BSC160N10NS3GATMA1 BSC060N10NS3GATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 8.8A (Ta), 42A (Tc) 14.9A (Ta), 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 16mOhm @ 33A, 10V 6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 3.5V @ 33µA 3.5V @ 90µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V 68 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 50 V 4900 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 60W (Tc) 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TDSON-8-1 PG-TDSON-8-1
Package / Case 8-PowerTDFN 8-PowerTDFN

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