Infineon Technologies-BSC130P03LSGAUMA1 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30 V
Current - Continuous Drain (Id) @ 25°C:	12A (Ta), 22.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	13mOhm @ 22.5A, 10V
Vgs(th) (Max) @ Id:	2.2V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:	73.1 nC @ 10 V
Vgs (Max):	±25V
Input Capacitance (Ciss) (Max) @ Vds:	3670 pF @ 15 V
FET Feature:	-
Power Dissipation (Max):	2.5W (Ta), 69W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-TDSON-8-3
Package / Case:	8-PowerVDFN

Infineon Technologies BSC130P03LSGAUMA1