BSC12DN20NS3GATMA1
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Infineon Technologies BSC12DN20NS3GATMA1

Manufacturer No:
BSC12DN20NS3GATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSC12DN20NS3GATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 200V 11.3A 8TDSON
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:11.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:125mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id:4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs:8.7 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:680 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):50W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-5
Package / Case:8-PowerTDFN
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In Stock

$1.76
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Similar Products

Part Number BSC12DN20NS3GATMA1 BSC22DN20NS3GATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 11.3A (Tc) 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 125mOhm @ 5.7A, 10V 225mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id 4V @ 25µA 4V @ 13µA
Gate Charge (Qg) (Max) @ Vgs 8.7 nC @ 10 V 5.6 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 680 pF @ 100 V 430 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 50W (Tc) 34W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TDSON-8-5 PG-TDSON-8-5
Package / Case 8-PowerTDFN 8-PowerTDFN

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