Infineon Technologies-BSC112N06LDATMA1 - Transistors - FETs, MOSFETs - Arrays Product Specifications and Latest Quotes

FET Type:	2 N-Channel (Dual)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	60V
Current - Continuous Drain (Id) @ 25°C:	20A (Tc)
Rds On (Max) @ Id, Vgs:	11.2mOhm @ 17A, 10V
Vgs(th) (Max) @ Id:	2.2V @ 28µA
Gate Charge (Qg) (Max) @ Vgs:	55nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	4020pF @ 30V
Power - Max:	65W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-PowerVDFN
Supplier Device Package:	PG-TDSON-8-4

Infineon Technologies BSC112N06LDATMA1