BSC097N06NSATMA1
  • Share:

Infineon Technologies BSC097N06NSATMA1

Manufacturer No:
BSC097N06NSATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSC097N06NSATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 46A TDSON-8-6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:46A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:9.7mOhm @ 40A, 10V
Vgs(th) (Max) @ Id:3.3V @ 14µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1075 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 36W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-6
Package / Case:8-PowerTDFN
0 Remaining View Similar

In Stock

$1.08
669

Please send RFQ , we will respond immediately.

Similar Products

Part Number BSC097N06NSATMA1 BSC097N06NSTATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 46A (Tc) 13A (Ta), 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 9.7mOhm @ 40A, 10V 9.7mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 3.3V @ 14µA 3.3V @ 14µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V 15 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1075 pF @ 30 V 1075 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 2.5W (Ta), 36W (Tc) 3W (Ta), 43W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TDSON-8-6 PG-TDSON-8-1
Package / Case 8-PowerTDFN 8-PowerTDFN

Related Product By Categories

PMZ600UNEYL
PMZ600UNEYL
Nexperia USA Inc.
MOSFET N-CH 20V 600MA DFN1006-3
STD6NK50ZT4
STD6NK50ZT4
STMicroelectronics
MOSFET N-CH 500V 5.6A DPAK
ZVN0545GTA
ZVN0545GTA
Diodes Incorporated
MOSFET N-CH 450V 140MA SOT223
TK3R2A08QM,S4X
TK3R2A08QM,S4X
Toshiba Semiconductor and Storage
UMOS10 TO-220SIS 80V 3.2MOHM
PMV100ENEAR
PMV100ENEAR
Nexperia USA Inc.
MOSFET N-CH 30V 3A TO236AB
IPD70N12S3L12ATMA1
IPD70N12S3L12ATMA1
Infineon Technologies
MOSFET N-CHANNEL_100+
AUIRF3805S-7P
AUIRF3805S-7P
Infineon Technologies
MOSFET N-CH 55V 160A D2PAK
SPB80N06S2L-09
SPB80N06S2L-09
Infineon Technologies
MOSFET N-CH 55V 80A TO263-3
IXTA2N80
IXTA2N80
IXYS
MOSFET N-CH 800V 2A TO263
IPI126N10N3 G
IPI126N10N3 G
Infineon Technologies
MOSFET N-CH 100V 58A TO262-3
SI7674DP-T1-E3
SI7674DP-T1-E3
Vishay Siliconix
MOSFET N-CH 30V 40A PPAK SO-8
R6035VNXC7G
R6035VNXC7G
Rohm Semiconductor
600V 17A TO-220FM, PRESTOMOS WIT

Related Product By Brand

IPG20N06S4L14ATMA2
IPG20N06S4L14ATMA2
Infineon Technologies
MOSFET 2N-CH 60V 20A 8TDSON
IPP60R060C7XKSA1
IPP60R060C7XKSA1
Infineon Technologies
MOSFET N-CH 600V 35A TO220-3
IRF7410TRPBF
IRF7410TRPBF
Infineon Technologies
MOSFET P-CH 12V 16A 8SO
IAUA250N04S6N005AUMA1
IAUA250N04S6N005AUMA1
Infineon Technologies
OPTIMOS POWER MOSFET
IRFR13N15DTR
IRFR13N15DTR
Infineon Technologies
MOSFET N-CH 150V 14A DPAK
IRF1405Z
IRF1405Z
Infineon Technologies
MOSFET N-CH 55V 75A TO220AB
IR2183PBF
IR2183PBF
Infineon Technologies
IC GATE DRVR HALF-BRIDGE 8DIP
CHL8228G-02CRT
CHL8228G-02CRT
Infineon Technologies
IC REG CTRLR GPU 2OUT 56VQFN
SP000410810
SP000410810
Infineon Technologies
KIT SAMPLE FOR MIX/DETECT PWRLVL
FM4-120L-S6E2HG
FM4-120L-S6E2HG
Infineon Technologies
S6E2HG EVAL BRD
MB96F657ABPMC-GSAE1
MB96F657ABPMC-GSAE1
Infineon Technologies
IC MCU 16BIT 416KB FLASH 120LQFP
CY7C1041GE30-10ZSXIT
CY7C1041GE30-10ZSXIT
Infineon Technologies
IC SRAM 4MBIT PARALLEL 44TSOP II