BSC097N06NSATMA1
  • Share:

Infineon Technologies BSC097N06NSATMA1

Manufacturer No:
BSC097N06NSATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSC097N06NSATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 46A TDSON-8-6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:46A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:9.7mOhm @ 40A, 10V
Vgs(th) (Max) @ Id:3.3V @ 14µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1075 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 36W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-6
Package / Case:8-PowerTDFN
0 Remaining View Similar

In Stock

$1.08
669

Please send RFQ , we will respond immediately.

Similar Products

Part Number BSC097N06NSATMA1 BSC097N06NSTATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 46A (Tc) 13A (Ta), 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 9.7mOhm @ 40A, 10V 9.7mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 3.3V @ 14µA 3.3V @ 14µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V 15 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1075 pF @ 30 V 1075 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 2.5W (Ta), 36W (Tc) 3W (Ta), 43W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TDSON-8-6 PG-TDSON-8-1
Package / Case 8-PowerTDFN 8-PowerTDFN

Related Product By Categories

FDU8876
FDU8876
Fairchild Semiconductor
MOSFET N-CH 30V 15A/73A IPAK
PSMN014-40YS,115
PSMN014-40YS,115
Nexperia USA Inc.
MOSFET N-CH 40V 46A LFPAK56
FDH44N50
FDH44N50
onsemi
MOSFET N-CH 500V 44A TO247-3
PJD50N10AL-AU_L2_000A1
PJD50N10AL-AU_L2_000A1
Panjit International Inc.
100V N-CHANNEL ENHANCEMENT MODE
DMN2991UTQ-7
DMN2991UTQ-7
Diodes Incorporated
MOSFET BVDSS: 8V~24V SOT523 T&R
DMTH4014LPSWQ-13
DMTH4014LPSWQ-13
Diodes Incorporated
MOSFET BVDSS: 31V~40V POWERDI506
IXTP30N25L2
IXTP30N25L2
IXYS
MOSFET N-CH 250V 30A TO220AB
FDS8878-F123
FDS8878-F123
onsemi
N-CHANNEL POWERTRENCH MOSFET 30V
SPP11N60S5HKSA1
SPP11N60S5HKSA1
Infineon Technologies
MOSFET N-CH 650V 11A TO220-3
IRF3704ZCLPBF
IRF3704ZCLPBF
Infineon Technologies
MOSFET N-CH 20V 67A TO262
RJK5015DPM-00#T1
RJK5015DPM-00#T1
Renesas Electronics America Inc
MOSFET N-CH 500V 25A TO3PFM
NVMFS5C404NWFT3G
NVMFS5C404NWFT3G
onsemi
MOSFET N-CH 40V 53A/378A 5DFN

Related Product By Brand

IDD08SG60CXTMA1
IDD08SG60CXTMA1
Infineon Technologies
DIODE SCHOTTKY 600V 8A TO252-3
PTFA181001EV4R250XTMA1
PTFA181001EV4R250XTMA1
Infineon Technologies
IC FET RF LDMOS 100W H-36248-2
IPD50N04S410ATMA1
IPD50N04S410ATMA1
Infineon Technologies
MOSFET N-CH 40V 50A TO252-3-313
AUXCLFZ24NSTRL
AUXCLFZ24NSTRL
Infineon Technologies
MOSFET N-CH 55V 17A D2PAK
IRF6633TR1PBF
IRF6633TR1PBF
Infineon Technologies
MOSFET N-CH 20V 16A DIRECTFET
IKP40N65H5
IKP40N65H5
Infineon Technologies
INSULATED GATE BIPOLAR TRANSISTO
SAF-XC164S-32F20F BB
SAF-XC164S-32F20F BB
Infineon Technologies
IC MCU 16BIT 256KB FLASH 100TQFP
TLE7250LEXUMA1
TLE7250LEXUMA1
Infineon Technologies
IC TRANSCEIVER HALF 1/1 TSON-8
MB90F387SPMCR-G
MB90F387SPMCR-G
Infineon Technologies
IC MCU 16BIT 64KB FLASH 48LQFP
MB90428GCPFV-GS-258E1
MB90428GCPFV-GS-258E1
Infineon Technologies
IC MCU 16BIT 128KB MROM 100LQFP
MB90561APMC-G-345-BNDE1
MB90561APMC-G-345-BNDE1
Infineon Technologies
IC MCU 16BIT 32KB MROM 64LQFP
CY62147EV30LL-55ZSXE
CY62147EV30LL-55ZSXE
Infineon Technologies
IC SRAM 4MBIT PARALLEL 44TSOP II