BSC0923NDIATMA1
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Infineon Technologies BSC0923NDIATMA1

Manufacturer No:
BSC0923NDIATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSC0923NDIATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET 2N-CH 30V 17A/32A TISON8
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:2 N-Channel (Dual) Asymmetrical
FET Feature:Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:17A, 32A
Rds On (Max) @ Id, Vgs:5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:1160pF @ 15V
Power - Max:1W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerTDFN
Supplier Device Package:PG-TISON-8
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$1.71
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Similar Products

Part Number BSC0923NDIATMA1 BSC0924NDIATMA1   BSC0921NDIATMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
FET Type 2 N-Channel (Dual) Asymmetrical 2 N-Channel (Dual) Asymmetrical 2 N-Channel (Dual) Asymmetrical
FET Feature Logic Level Gate, 4.5V Drive Logic Level Gate, 4.5V Drive Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss) 30V 30V 30V
Current - Continuous Drain (Id) @ 25°C 17A, 32A 17A, 32A 17A, 31A
Rds On (Max) @ Id, Vgs 5mOhm @ 20A, 10V 5mOhm @ 20A, 10V 5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10nC @ 4.5V 10nC @ 4.5V 8.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1160pF @ 15V 1160pF @ 15V 1025pF @ 15V
Power - Max 1W 1W 1W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN
Supplier Device Package PG-TISON-8 PG-TISON-8 PG-TISON-8

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