Infineon Technologies-BSC0910NDIATMA1 - Transistors - FETs, MOSFETs - Arrays Product Specifications and Latest Quotes

FET Type:	2 N-Channel (Dual) Asymmetrical
FET Feature:	Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss):	25V
Current - Continuous Drain (Id) @ 25°C:	11A, 31A
Rds On (Max) @ Id, Vgs:	4.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	6.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:	4500pF @ 12V
Power - Max:	1W
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-PowerTDFN
Supplier Device Package:	PG-TISON-8

Infineon Technologies BSC0910NDIATMA1