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Part Number | BSC0908NSATMA1 | BSC0909NSATMA1 | BSC0901NSATMA1 | BSC0902NSATMA1 | BSC0906NSATMA1 |
---|---|---|---|---|---|
Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Product Status | Obsolete | Active | Active | Active | Active |
FET Type | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 34 V | 34 V | 30 V | 30 V | 30 V |
Current - Continuous Drain (Id) @ 25°C | 14A (Ta), 49A (Tc) | 12A (Ta), 44A (Tc) | 28A (Ta), 100A (Tc) | 24A (Ta), 100A (Tc) | 18A (Ta), 63A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 8mOhm @ 30A, 10V | 9.2mOhm @ 20A, 10V | 1.9mOhm @ 30A, 10V | 2.6mOhm @ 30A, 10V | 4.5mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id | 2.2V @ 250µA | 2V @ 250µA | 2.2V @ 250µA | 2.2V @ 250µA | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V | 15 nC @ 10 V | 44 nC @ 10 V | 26 nC @ 10 V | 13 nC @ 10 V |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1220 pF @ 15 V | 1110 pF @ 15 V | 2800 pF @ 15 V | 1700 pF @ 15 V | 870 pF @ 15 V |
FET Feature | - | - | - | - | - |
Power Dissipation (Max) | 2.5W (Ta), 30W (Tc) | 2.5W (Ta), 27W (Tc) | 2.5W (Ta), 69W (Tc) | 2.5W (Ta), 48W (Tc) | 2.5W (Ta), 30W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Supplier Device Package | PG-TDSON-8-1 | PG-TDSON-8-5 | PG-TDSON-8-5 | PG-TDSON-8-6 | PG-TDSON-8-6 |
Package / Case | 8-PowerTDFN | 8-PowerTDFN | 8-PowerTDFN | 8-PowerTDFN | 8-PowerTDFN |