BSC0902NSATMA1
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Infineon Technologies BSC0902NSATMA1

Manufacturer No:
BSC0902NSATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSC0902NSATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 24A/100A TDSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:24A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2.6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:26 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1700 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 48W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-6
Package / Case:8-PowerTDFN
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$1.35
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Similar Products

Part Number BSC0902NSATMA1 BSC0906NSATMA1   BSC0902NSIATMA1   BSC0909NSATMA1   BSC0908NSATMA1   BSC0402NSATMA1   BSC0901NSATMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active Obsolete Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel - N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 34 V 34 V - 30 V
Current - Continuous Drain (Id) @ 25°C 24A (Ta), 100A (Tc) 18A (Ta), 63A (Tc) 23A (Ta), 100A (Tc) 12A (Ta), 44A (Tc) 14A (Ta), 49A (Tc) - 28A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V - 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.6mOhm @ 30A, 10V 4.5mOhm @ 30A, 10V 2.8mOhm @ 30A, 10V 9.2mOhm @ 20A, 10V 8mOhm @ 30A, 10V - 1.9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA 2V @ 250µA 2V @ 10mA 2V @ 250µA 2.2V @ 250µA - 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 26 nC @ 10 V 13 nC @ 10 V 32 nC @ 10 V 15 nC @ 10 V 14 nC @ 10 V - 44 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V - ±20V
Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 15 V 870 pF @ 15 V 1500 pF @ 15 V 1110 pF @ 15 V 1220 pF @ 15 V - 2800 pF @ 15 V
FET Feature - - - - - - -
Power Dissipation (Max) 2.5W (Ta), 48W (Tc) 2.5W (Ta), 30W (Tc) 2.5W (Ta), 48W (Tc) 2.5W (Ta), 27W (Tc) 2.5W (Ta), 30W (Tc) - 2.5W (Ta), 69W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount - Surface Mount
Supplier Device Package PG-TDSON-8-6 PG-TDSON-8-6 PG-TDSON-8-6 PG-TDSON-8-5 PG-TDSON-8-1 - PG-TDSON-8-5
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN - 8-PowerTDFN

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