BSC0901NSATMA1
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Infineon Technologies BSC0901NSATMA1

Manufacturer No:
BSC0901NSATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSC0901NSATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 28A/100A TDSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:28A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:44 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2800 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 69W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-5
Package / Case:8-PowerTDFN
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Similar Products

Part Number BSC0901NSATMA1 BSC0902NSATMA1   BSC0906NSATMA1   BSC0909NSATMA1   BSC0901NSIATMA1   BSC0908NSATMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 34 V 30 V 34 V
Current - Continuous Drain (Id) @ 25°C 28A (Ta), 100A (Tc) 24A (Ta), 100A (Tc) 18A (Ta), 63A (Tc) 12A (Ta), 44A (Tc) 28A (Ta), 100A (Tc) 14A (Ta), 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.9mOhm @ 30A, 10V 2.6mOhm @ 30A, 10V 4.5mOhm @ 30A, 10V 9.2mOhm @ 20A, 10V 2mOhm @ 30A, 10V 8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA 2.2V @ 250µA 2V @ 250µA 2V @ 250µA 2.2V @ 250µA 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 44 nC @ 10 V 26 nC @ 10 V 13 nC @ 10 V 15 nC @ 10 V 20 nC @ 15 V 14 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2800 pF @ 15 V 1700 pF @ 15 V 870 pF @ 15 V 1110 pF @ 15 V 2600 pF @ 15 V 1220 pF @ 15 V
FET Feature - - - - - -
Power Dissipation (Max) 2.5W (Ta), 69W (Tc) 2.5W (Ta), 48W (Tc) 2.5W (Ta), 30W (Tc) 2.5W (Ta), 27W (Tc) 2.5W (Ta), 69W (Tc) 2.5W (Ta), 30W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-TDSON-8-5 PG-TDSON-8-6 PG-TDSON-8-6 PG-TDSON-8-5 PG-TDSON-8-6 PG-TDSON-8-1
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

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