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| Part Number | BSC084P03NS3GATMA1 | BSC084P03NS3EGATMA1 |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Status | Active | Not For New Designs |
| FET Type | P-Channel | P-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 14.9A (Ta), 78.6A (Tc) | 14.9A (Ta), 78.6A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 8.4mOhm @ 50A, 10V | 8.4mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id | 3.1V @ 105µA | 3V @ 110µA |
| Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 10 V | 57.7 nC @ 10 V |
| Vgs (Max) | ±25V | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds | 4785 pF @ 15 V | 4240 pF @ 15 V |
| FET Feature | - | - |
| Power Dissipation (Max) | 2.5W (Ta), 69W (Tc) | 2.5W (Ta), 69W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Supplier Device Package | PG-TDSON-8-5 | PG-TDSON-8-5 |
| Package / Case | 8-PowerTDFN | 8-PowerTDFN |
