BSC084P03NS3EGATMA1
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Infineon Technologies BSC084P03NS3EGATMA1

Manufacturer No:
BSC084P03NS3EGATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSC084P03NS3EGATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 30V 14.9A 8TDSON
Delivery:
Payment:
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Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:14.9A (Ta), 78.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:8.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:3V @ 110µA
Gate Charge (Qg) (Max) @ Vgs:57.7 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:4240 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 69W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-5
Package / Case:8-PowerTDFN
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Similar Products

Part Number BSC084P03NS3EGATMA1 BSC084P03NS3GATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Not For New Designs Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 14.9A (Ta), 78.6A (Tc) 14.9A (Ta), 78.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 8.4mOhm @ 50A, 10V 8.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 3V @ 110µA 3.1V @ 105µA
Gate Charge (Qg) (Max) @ Vgs 57.7 nC @ 10 V 58 nC @ 10 V
Vgs (Max) ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 4240 pF @ 15 V 4785 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 2.5W (Ta), 69W (Tc) 2.5W (Ta), 69W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TDSON-8-5 PG-TDSON-8-5
Package / Case 8-PowerTDFN 8-PowerTDFN

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