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| Part Number | BSC0803LSATMA1 | BSC0805LSATMA1 | BSC0804LSATMA1 | BSC0703LSATMA1 | BSC0802LSATMA1 |
|---|---|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Status | Not For New Designs | Not For New Designs | Not For New Designs | Active | Not For New Designs |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V | 100 V | 100 V | 60 V | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta), 44A (Tc) | 79A (Tc) | 40A (Tc) | 15A (Ta), 64A (Tc) | 20A (Ta), 100A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 14.6mOhm @ 22A, 10V | 7mOhm @ 40A, 10V | 9.6mOhm @ 20A, 10V | 6.5mOhm @ 32A, 10V | 3.4mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id | 2.3V @ 23µA | 2.3V @ 49µA | 2.3V @ 36µA | 2.3V @ 20µA | 2.3V @ 115µA |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 4.5 V | 20 nC @ 4.5 V | 14.6 nC @ 4.5 V | 13 nC @ 4.5 V | 46 nC @ 4.5 V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 50 V | 2700 pF @ 50 V | 2100 pF @ 50 V | 1800 pF @ 30 V | 6500 pF @ 50 V |
| FET Feature | - | - | - | - | - |
| Power Dissipation (Max) | 2.5W (Ta), 52W (Tc) | 83W (Tc) | 83W (Tc) | 2.5W (Ta), 46W (Tc) | 156W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | PG-TDSON-8-6 | PG-TDSON-8-6 | PG-TDSON-8-6 | PG-TDSON-8-6 | PG-TDSON-8-7 |
| Package / Case | 8-PowerTDFN | 8-PowerTDFN | 8-PowerTDFN | 8-PowerTDFN | 8-PowerTDFN |
