BSC0802LSATMA1
  • Share:

Infineon Technologies BSC0802LSATMA1

Manufacturer No:
BSC0802LSATMA1
Manufacturer:
Infineon Technologies
Package:
Cut Tape (CT)
Datasheet:
BSC0802LSATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 20A/100A TDSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:20A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2.3V @ 115µA
Gate Charge (Qg) (Max) @ Vgs:46 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6500 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):156W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-7
Package / Case:8-PowerTDFN
0 Remaining View Similar

In Stock

$3.69
191

Please send RFQ , we will respond immediately.

Similar Products

Part Number BSC0802LSATMA1 BSC0805LSATMA1   BSC0803LSATMA1   BSC0804LSATMA1   BSC0302LSATMA1   BSC0702LSATMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Not For New Designs Not For New Designs Not For New Designs Not For New Designs Active Not For New Designs
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V 100 V 120 V 60 V
Current - Continuous Drain (Id) @ 25°C 20A (Ta), 100A (Tc) 79A (Tc) 10A (Ta), 44A (Tc) 40A (Tc) 12A (Ta), 99A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.4mOhm @ 50A, 10V 7mOhm @ 40A, 10V 14.6mOhm @ 22A, 10V 9.6mOhm @ 20A, 10V 8mOhm @ 50A, 10V 2.3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.3V @ 115µA 2.3V @ 49µA 2.3V @ 23µA 2.3V @ 36µA 2.4V @ 112µA 2.3V @ 49µA
Gate Charge (Qg) (Max) @ Vgs 46 nC @ 4.5 V 20 nC @ 4.5 V 10 nC @ 4.5 V 14.6 nC @ 4.5 V 79 nC @ 10 V 30 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6500 pF @ 50 V 2700 pF @ 50 V 1300 pF @ 50 V 2100 pF @ 50 V 7400 pF @ 60 V 4400 pF @ 30 V
FET Feature - - - - - Standard
Power Dissipation (Max) 156W (Tc) 83W (Tc) 2.5W (Ta), 52W (Tc) 83W (Tc) 156W (Tc) 83W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-TDSON-8-7 PG-TDSON-8-6 PG-TDSON-8-6 PG-TDSON-8-6 PG-TDSON-8-7 PG-TDSON-8
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

Related Product By Categories

HUF75332S3ST
HUF75332S3ST
Fairchild Semiconductor
MOSFET N-CH 55V 52A D2PAK
STH270N4F3-2
STH270N4F3-2
STMicroelectronics
MOSFET N-CH 40V 180A H2PAK
IXTA08N50D2
IXTA08N50D2
IXYS
MOSFET N-CH 500V 800MA TO263
FQB5N90TM
FQB5N90TM
onsemi
MOSFET N-CH 900V 5.4A D2PAK
PSMN8R0-30YLC115
PSMN8R0-30YLC115
NXP USA Inc.
N-CHANNEL POWER MOSFET
IRF620S
IRF620S
Vishay Siliconix
MOSFET N-CH 200V 5.2A D2PAK
IRFR3711TRL
IRFR3711TRL
Infineon Technologies
MOSFET N-CH 20V 100A DPAK
BSP613PL6327HUSA1
BSP613PL6327HUSA1
Infineon Technologies
MOSFET P-CH 60V 2.9A SOT223-4
IRFS3206PBF
IRFS3206PBF
Infineon Technologies
MOSFET N-CH 60V 120A D2PAK
IXUV170N075
IXUV170N075
IXYS
MOSFET N-CH 75V 175A PLUS220
NTB6412ANG
NTB6412ANG
onsemi
MOSFET N-CH 100V 58A D2PAK
NTMFS4H02NFT1G
NTMFS4H02NFT1G
onsemi
MOSFET N-CH 25V 37A/193A 5DFN

Related Product By Brand

IRF7811WTRPBF
IRF7811WTRPBF
Infineon Technologies
MOSFET N-CH 30V 14A 8SO
TLE94106ESXUMA1
TLE94106ESXUMA1
Infineon Technologies
IC DRIVER HALF-BRIDGE 24TSDSO
IR2113-2
IR2113-2
Infineon Technologies
IC GATE DRVR HALF-BRIDGE 16DIP
IRU1050CM
IRU1050CM
Infineon Technologies
IC REG LINEAR POS ADJ 5A TO263
CY25200-ZXC010AT
CY25200-ZXC010AT
Infineon Technologies
IC PROG SSCLK GENERATOR 16-TSSOP
CY22393FXAT
CY22393FXAT
Infineon Technologies
IC CLOCK GEN 3-PLL 16TSSOP
MB89695BPFM-G-188-BND
MB89695BPFM-G-188-BND
Infineon Technologies
IC MCU 8BIT FFMC-8L-0.5 64LQFP
MB90F362TESPMT-GSE1
MB90F362TESPMT-GSE1
Infineon Technologies
IC MCU 16BIT 64KB FLASH 48LQFP
S6E1B34E0AGV20000
S6E1B34E0AGV20000
Infineon Technologies
IC MCU 32BIT 304KB FLASH 80LQFP
CY7C1041G30-10BVJXIT
CY7C1041G30-10BVJXIT
Infineon Technologies
IC SRAM 4MBIT PARALLEL 48VFBGA
CY7C0852V-133BBCT
CY7C0852V-133BBCT
Infineon Technologies
IC SRAM 4.5MBIT PARALLEL 172FBGA
S29GL032N90BFI032
S29GL032N90BFI032
Infineon Technologies
IC FLASH 32MBIT PARALLEL 48FBGA