BSC0802LSATMA1
  • Share:

Infineon Technologies BSC0802LSATMA1

Manufacturer No:
BSC0802LSATMA1
Manufacturer:
Infineon Technologies
Package:
Cut Tape (CT)
Datasheet:
BSC0802LSATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 20A/100A TDSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:20A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2.3V @ 115µA
Gate Charge (Qg) (Max) @ Vgs:46 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6500 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):156W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-7
Package / Case:8-PowerTDFN
0 Remaining View Similar

In Stock

$3.69
191

Please send RFQ , we will respond immediately.

Similar Products

Part Number BSC0802LSATMA1 BSC0805LSATMA1   BSC0803LSATMA1   BSC0804LSATMA1   BSC0302LSATMA1   BSC0702LSATMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Not For New Designs Not For New Designs Not For New Designs Not For New Designs Active Not For New Designs
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V 100 V 120 V 60 V
Current - Continuous Drain (Id) @ 25°C 20A (Ta), 100A (Tc) 79A (Tc) 10A (Ta), 44A (Tc) 40A (Tc) 12A (Ta), 99A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.4mOhm @ 50A, 10V 7mOhm @ 40A, 10V 14.6mOhm @ 22A, 10V 9.6mOhm @ 20A, 10V 8mOhm @ 50A, 10V 2.3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.3V @ 115µA 2.3V @ 49µA 2.3V @ 23µA 2.3V @ 36µA 2.4V @ 112µA 2.3V @ 49µA
Gate Charge (Qg) (Max) @ Vgs 46 nC @ 4.5 V 20 nC @ 4.5 V 10 nC @ 4.5 V 14.6 nC @ 4.5 V 79 nC @ 10 V 30 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6500 pF @ 50 V 2700 pF @ 50 V 1300 pF @ 50 V 2100 pF @ 50 V 7400 pF @ 60 V 4400 pF @ 30 V
FET Feature - - - - - Standard
Power Dissipation (Max) 156W (Tc) 83W (Tc) 2.5W (Ta), 52W (Tc) 83W (Tc) 156W (Tc) 83W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-TDSON-8-7 PG-TDSON-8-6 PG-TDSON-8-6 PG-TDSON-8-6 PG-TDSON-8-7 PG-TDSON-8
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

Related Product By Categories

CPH6604-TL-E
CPH6604-TL-E
onsemi
N-CHANNEL SILICON MOSFET
MTDF1N03HDR2
MTDF1N03HDR2
onsemi
SMALL SIGNAL N-CHANNEL MOSFET
FQE10N20CTU
FQE10N20CTU
Fairchild Semiconductor
MOSFET N-CH 200V 4A TO126-3
HAT1142R02-EL-E
HAT1142R02-EL-E
Renesas Electronics America Inc
P-CHANNEL POWER MOSFET
BSP321PH6327XTSA1
BSP321PH6327XTSA1
Infineon Technologies
MOSFET P-CH 100V 980MA SOT223-4
SIHH14N60E-T1-GE3
SIHH14N60E-T1-GE3
Vishay Siliconix
MOSFET N-CH 600V 16A PPAK 8 X 8
FQD2N60TM
FQD2N60TM
onsemi
MOSFET N-CH 600V 2A DPAK
APT60M80JVR
APT60M80JVR
Microsemi Corporation
MOSFET N-CH 600V 55A ISOTOP
SUM70N04-07L-E3
SUM70N04-07L-E3
Vishay Siliconix
MOSFET N-CH 40V 70A TO263
BUK9Y12-80E,115
BUK9Y12-80E,115
Nexperia USA Inc.
MOSFET N-CH 80V LFPAK56 PWR-SO8
IPP50R520CPXKSA1
IPP50R520CPXKSA1
Infineon Technologies
MOSFET N-CH 500V 7.1A TO220-3
NTMFS4934NT3G
NTMFS4934NT3G
onsemi
MOSFET N-CH 30V 147A SO8FL

Related Product By Brand

EVALSF3-ICE3A5565P
EVALSF3-ICE3A5565P
Infineon Technologies
BOARD DEMO ICE3A5565P 100W SMPS
IRFR12N25DCTRLP
IRFR12N25DCTRLP
Infineon Technologies
MOSFET N-CH 250V 14A DPAK
IRU3010CWTR
IRU3010CWTR
Infineon Technologies
IC REG BUCK SYNC 20SOIC(W)
1EDI2001ASXUMA2
1EDI2001ASXUMA2
Infineon Technologies
IC IGBT DVR 1200V DSO36
FM4-U120-9B560
FM4-U120-9B560
Infineon Technologies
MB9BF568R EVAL BRD
CY24488ZXCT
CY24488ZXCT
Infineon Technologies
IC PLL CLK GEN I2C 16-TSSOP
CY9BF165LPMC1-G-JNE2
CY9BF165LPMC1-G-JNE2
Infineon Technologies
IC MCU 32BIT 416KB FLASH 64LQFP
MB90867ESPMC-G-180-JNE1
MB90867ESPMC-G-180-JNE1
Infineon Technologies
IC MCU 16BIT 128KB MROM 100LQFP
MB91F248PFV-GSK5E1
MB91F248PFV-GSK5E1
Infineon Technologies
IC MCU 32BIT 256KB FLASH 144LQFP
S29GL032N11FFIS32
S29GL032N11FFIS32
Infineon Technologies
IC FLASH 32MBIT PARALLEL 64FBGA
S26KS128SDPBHA020
S26KS128SDPBHA020
Infineon Technologies
IC FLASH 128MBIT PARALLEL 24FBGA
CY7C12451KV18-400BZC
CY7C12451KV18-400BZC
Infineon Technologies
IC SRAM 36MBIT PARALLEL 165FBGA