BSC070N10LS5ATMA1
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Infineon Technologies BSC070N10LS5ATMA1

Manufacturer No:
BSC070N10LS5ATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSC070N10LS5ATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 14A/79A TDSON
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:14A (Ta), 79A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:7mOhm @ 40A, 10V
Vgs(th) (Max) @ Id:2.3V @ 49µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2700 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 83W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-7
Package / Case:8-PowerTDFN
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$3.09
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Similar Products

Part Number BSC070N10LS5ATMA1 BSC070N10NS5ATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 14A (Ta), 79A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 7mOhm @ 40A, 10V 7mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 2.3V @ 49µA 3.8V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 4.5 V 38 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2700 pF @ 50 V 2700 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 2.5W (Ta), 83W (Tc) 2.5W (Ta), 83W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TDSON-8-7 PG-TDSON-8-7
Package / Case 8-PowerTDFN 8-PowerTDFN

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