Infineon Technologies-BSC060P03NS3EGATMA1 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30 V
Current - Continuous Drain (Id) @ 25°C:	17.7A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Rds On (Max) @ Id, Vgs:	6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:	3.1V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:	81 nC @ 10 V
Vgs (Max):	±25V
Input Capacitance (Ciss) (Max) @ Vds:	6020 pF @ 15 V
FET Feature:	-
Power Dissipation (Max):	2.5W (Ta), 83W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-TDSON-8-1
Package / Case:	8-PowerTDFN

Infineon Technologies BSC060P03NS3EGATMA1