BSC060N10NS3GATMA1
  • Share:

Infineon Technologies BSC060N10NS3GATMA1

Manufacturer No:
BSC060N10NS3GATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSC060N10NS3GATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 14.9/90A 8TDSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:14.9A (Ta), 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:3.5V @ 90µA
Gate Charge (Qg) (Max) @ Vgs:68 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4900 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-1
Package / Case:8-PowerTDFN
0 Remaining View Similar

In Stock

$3.32
225

Please send RFQ , we will respond immediately.

Similar Products

Part Number BSC060N10NS3GATMA1 BSC160N10NS3GATMA1   BSC070N10NS3GATMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 14.9A (Ta), 90A (Tc) 8.8A (Ta), 42A (Tc) 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 6mOhm @ 50A, 10V 16mOhm @ 33A, 10V 7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 3.5V @ 90µA 3.5V @ 33µA 3.5V @ 75µA
Gate Charge (Qg) (Max) @ Vgs 68 nC @ 10 V 25 nC @ 10 V 55 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4900 pF @ 50 V 1700 pF @ 50 V 4000 pF @ 50 V
FET Feature - - -
Power Dissipation (Max) 125W (Tc) 60W (Tc) 114W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-TDSON-8-1 PG-TDSON-8-1 PG-TDSON-8-1
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

Related Product By Categories

NX5008NBKMYL
NX5008NBKMYL
Nexperia USA Inc.
MOSFET N-CH 50V 350MA DFN1006-3
STU1HN60K3
STU1HN60K3
STMicroelectronics
MOSFET N-CH 600V 1.2A IPAK
STP200N3LL
STP200N3LL
STMicroelectronics
MOSFET N-CH 30V 120A TO220
IRFP4137PBF
IRFP4137PBF
Infineon Technologies
MOSFET N-CH 300V 38A TO247AC
CSD19537Q3T
CSD19537Q3T
Texas Instruments
MOSFET N-CH 100V 50A 8VSON
DMP3050LVT-7
DMP3050LVT-7
Diodes Incorporated
MOSFET P CH 30V 4.5A TSOT26
IRFU7440PBF
IRFU7440PBF
Infineon Technologies
MOSFET N-CH 40V 90A IPAK
NVMFS5C670NLAFT1G
NVMFS5C670NLAFT1G
onsemi
MOSFET N-CHANNEL 60V 17A 5DFN
TP0101K-T1-E3
TP0101K-T1-E3
Vishay Siliconix
MOSFET P-CH 20V 0.58A SOT23-3
IXTH62N25T
IXTH62N25T
IXYS
MOSFET N-CH 250V 62A TO247
FDMS86568-F085
FDMS86568-F085
onsemi
MOSFET N-CH 60V 80A POWER56
AOT474_001
AOT474_001
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 75V TO220

Related Product By Brand

DD170N16SHPSA1
DD170N16SHPSA1
Infineon Technologies
BRIDGE RECT 1P 1.6KV 165A PB34SB
IDB30E60ATMA1
IDB30E60ATMA1
Infineon Technologies
DIODE GEN PURP 600V 52.3A TO263
IPB60R040C7ATMA1
IPB60R040C7ATMA1
Infineon Technologies
MOSFET N-CH 650V 50A TO263-3
IRF3709ZCSTRR
IRF3709ZCSTRR
Infineon Technologies
MOSFET N-CH 30V 87A D2PAK
SAKC164CI8E25MDB
SAKC164CI8E25MDB
Infineon Technologies
LEGACY 16-BIT MCU
CY8C4147AZI-S453
CY8C4147AZI-S453
Infineon Technologies
IC MCU 32BIT 128KB FLASH 48TQFP
CY90F395HAPMCR-GS-SPE2
CY90F395HAPMCR-GS-SPE2
Infineon Technologies
IC MCU 16BIT 512KB FLASH 120LQFP
MB91248SZPFV-GS-503E1
MB91248SZPFV-GS-503E1
Infineon Technologies
IC MCU 32BIT 256KB MROM 144LQFP
MB96F387RWAPMCR-GSE2
MB96F387RWAPMCR-GSE2
Infineon Technologies
IC MCU 16BIT 416KB FLASH 120LQFP
CY9AF155NBBGL-GE1
CY9AF155NBBGL-GE1
Infineon Technologies
IC MCU 32BIT 416KB FLSH 112PFBGA
CY7C1315TV18-167BZC
CY7C1315TV18-167BZC
Infineon Technologies
IC SRAM 18MBIT PARALLEL 165FBGA
FM25040B-GA1
FM25040B-GA1
Infineon Technologies
IC FRAM 4KBIT SPI 14MHZ 8SOIC