BSC050N03MSGATMA1
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Infineon Technologies BSC050N03MSGATMA1

Manufacturer No:
BSC050N03MSGATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSC050N03MSGATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 16A/80A TDSON
Delivery:
Payment:
iso14001
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iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:16A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:46 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3600 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 50W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-5
Package / Case:8-PowerTDFN
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Part Number BSC050N03MSGATMA1 BSC080N03MSGATMA1   BSC057N03MSGATMA1   BSC090N03MSGATMA1   BSC020N03MSGATMA1   BSC030N03MSGATMA1   BSC050N03LSGATMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Active Last Time Buy Obsolete Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 16A (Ta), 80A (Tc) 13A (Ta), 53A (Tc) 15A (Ta), 71A (Tc) 12A (Ta), 48A (Tc) 25A (Ta), 100A (Tc) 21A (Ta), 100A (Tc) 18A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 5mOhm @ 30A, 10V 8mOhm @ 30A, 10V 5.7mOhm @ 30A, 10V 9mOhm @ 30A, 10V 2mOhm @ 30A, 10V 3mOhm @ 30A, 10V 5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA 2V @ 250µA 2V @ 250µA 2V @ 250µA 2V @ 250µA 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 46 nC @ 10 V 27 nC @ 10 V 40 nC @ 10 V 24 nC @ 10 V 124 nC @ 10 V 73 nC @ 10 V 35 nC @ 10 V
Vgs (Max) ±20V ±20V ±16V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3600 pF @ 15 V 2100 pF @ 15 V 3100 pF @ 15 V 1900 pF @ 15 V 9600 pF @ 15 V 5700 pF @ 15 V 2800 pF @ 15 V
FET Feature - - - - - - -
Power Dissipation (Max) 2.5W (Ta), 50W (Tc) 2.5W (Ta), 35W (Tc) 2.5W (Ta), 45W (Tc) 2.5W (Ta), 32W (Tc) 2.5W (Ta), 96W (Tc) 2.5W (Ta), 69W (Tc) 2.5W (Ta), 50W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-TDSON-8-5 PG-TDSON-8-5 PG-TDSON-8-5 PG-TDSON-8-5 PG-TDSON-8-1 PG-TDSON-8-1 PG-TDSON-8-5
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

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