BSC050N03LSGATMA1
  • Share:

Infineon Technologies BSC050N03LSGATMA1

Manufacturer No:
BSC050N03LSGATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSC050N03LSGATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 18A/80A TDSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:18A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2800 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 50W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-5
Package / Case:8-PowerTDFN
0 Remaining View Similar

In Stock

$1.01
650

Please send RFQ , we will respond immediately.

Similar Products

Part Number BSC050N03LSGATMA1 BSC090N03LSGATMA1   BSC050N04LSGATMA1   BSC057N03LSGATMA1   BSC080N03LSGATMA1   BSC050N03MSGATMA1   BSC020N03LSGATMA1   BSC030N03LSGATMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active Last Time Buy Obsolete Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 40 V 30 V 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 18A (Ta), 80A (Tc) 13A (Ta), 48A (Tc) 18A (Ta), 85A (Tc) 17A (Ta), 71A (Tc) 14A (Ta), 53A (Tc) 16A (Ta), 80A (Tc) 28A (Ta), 100A (Tc) 23A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 5mOhm @ 30A, 10V 9mOhm @ 30A, 10V 5mOhm @ 50A, 10V 5.7mOhm @ 30A, 10V 8mOhm @ 30A, 10V 5mOhm @ 30A, 10V 2mOhm @ 30A, 10V 3mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA 2.2V @ 250µA 2V @ 27µA 2.2V @ 250µA 2.2V @ 250µA 2V @ 250µA 2.2V @ 250µA 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V 18 nC @ 10 V 47 nC @ 10 V 30 nC @ 10 V 21 nC @ 10 V 46 nC @ 10 V 93 nC @ 10 V 55 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2800 pF @ 15 V 1500 pF @ 15 V 3700 pF @ 20 V 2400 pF @ 15 V 1700 pF @ 15 V 3600 pF @ 15 V 7200 pF @ 15 V 4300 pF @ 15 V
FET Feature - - - - - - - -
Power Dissipation (Max) 2.5W (Ta), 50W (Tc) 2.5W (Ta), 32W (Tc) 2.5W (Ta), 57W (Tc) 2.5W (Ta), 45W (Tc) 2.5W (Ta), 35W (Tc) 2.5W (Ta), 50W (Tc) 2.5W (Ta), 96W (Tc) 2.5W (Ta), 69W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-TDSON-8-5 PG-TDSON-8-5 PG-TDSON-8-5 PG-TDSON-8-5 PG-TDSON-8-5 PG-TDSON-8-5 PG-TDSON-8-1 PG-TDSON-8-1
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

Related Product By Categories

FDB7030L
FDB7030L
Fairchild Semiconductor
MOSFET N-CH 30V 80A TO263AB
FDPF5N50T
FDPF5N50T
onsemi
MOSFET N-CH 500V 5A TO220F
IPB80P04P4L04ATMA2
IPB80P04P4L04ATMA2
Infineon Technologies
MOSFET P-CH 40V 80A TO263-3
SI7114DN-T1-GE3
SI7114DN-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 11.7A PPAK1212-8
IXTQ470P2
IXTQ470P2
IXYS
MOSFET N-CH 500V 42A TO3P
BUK9524-55A,127
BUK9524-55A,127
NXP USA Inc.
MOSFET N-CH 55V 46A TO220AB
STS12NF30L
STS12NF30L
STMicroelectronics
MOSFET N-CH 30V 12A 8SO
NTB13N10G
NTB13N10G
onsemi
MOSFET N-CH 100V 13A D2PAK
BFL4026
BFL4026
onsemi
MOSFET N-CH 900V 3.5A TO220FI
IPW65R190CFDAFKSA1
IPW65R190CFDAFKSA1
Infineon Technologies
MOSFET N-CH 650V 17.5A TO247-3
SQV120N10-3M8_GE3
SQV120N10-3M8_GE3
Vishay Siliconix
MOSFET N-CH 100V 120A TO262-3
SCT3080ALHRC11
SCT3080ALHRC11
Rohm Semiconductor
SICFET N-CH 650V 30A TO247N

Related Product By Brand

BC858BW
BC858BW
Infineon Technologies
TRANS PNP 30V 0.1A SOT323
IRLR3114ZTRPBF
IRLR3114ZTRPBF
Infineon Technologies
MOSFET N-CH 40V 42A DPAK
BSZ086P03NS3GATMA1
BSZ086P03NS3GATMA1
Infineon Technologies
MOSFET P-CH 30V 13.5A/40A TSDSON
IRLI2910PBF
IRLI2910PBF
Infineon Technologies
MOSFET N-CH 100V 31A TO220AB FP
IR3563BMTRPBF
IR3563BMTRPBF
Infineon Technologies
IC REG CTRLR INTEL 1OUT 48QFN
CY2077FSXCT
CY2077FSXCT
Infineon Technologies
IC CLOCK GEN PROG 8-SOIC
CY8C4248LTQ-L485
CY8C4248LTQ-L485
Infineon Technologies
IC MCU 32BIT 256KB FLASH 68QFN
CY90030PMC-GS-131E1
CY90030PMC-GS-131E1
Infineon Technologies
IC MCU 16BIT FFMC-16F0.35 64LQFP
MB95176MPMC1-GS-104E1
MB95176MPMC1-GS-104E1
Infineon Technologies
IC MCU 8BIT FFMC-8L-0.5B 64LQFP
CY7C1041G-10ZSXI
CY7C1041G-10ZSXI
Infineon Technologies
IC SRAM 4MBIT PARALLEL 44TSOP II
CY62147EV18LL-45BVXI
CY62147EV18LL-45BVXI
Infineon Technologies
IC SRAM 4MBIT PARALLEL 48VFBGA
CY90F048APMC-GE1
CY90F048APMC-GE1
Infineon Technologies
IC MEM MM MCU 100LQFP