BSC0501NSIATMA1
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Infineon Technologies BSC0501NSIATMA1

Manufacturer No:
BSC0501NSIATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSC0501NSIATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 29A/100A TDSON
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:29A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:33 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2200 pF @ 15 V
FET Feature:Schottky Diode (Body)
Power Dissipation (Max):2.5W (Ta), 50W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-6
Package / Case:8-PowerTDFN
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$1.75
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Similar Products

Part Number BSC0501NSIATMA1 BSC0504NSIATMA1   BSC0502NSIATMA1   BSC0901NSIATMA1   BSC0503NSIATMA1   BSC0500NSIATMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 29A (Ta), 100A (Tc) 21A (Ta), 72A (Tc) 26A (Ta), 100A (Tc) 28A (Ta), 100A (Tc) 22A (Ta), 88A (Tc) 35A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.9mOhm @ 30A, 10V 3.7mOhm @ 30A, 10V 2.3mOhm @ 30A, 10V 2mOhm @ 30A, 10V 3mOhm @ 30A, 10V 1.3mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA 2V @ 250µA 2.2V @ 250µA 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 33 nC @ 10 V 15 nC @ 10 V 26 nC @ 10 V 20 nC @ 15 V 20 nC @ 10 V 52 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2200 pF @ 15 V 960 pF @ 15 V 1600 pF @ 15 V 2600 pF @ 15 V 1300 pF @ 15 V 3300 pF @ 15 V
FET Feature Schottky Diode (Body) - - - - -
Power Dissipation (Max) 2.5W (Ta), 50W (Tc) 2.5W (Ta), 30W (Tc) 2.5W (Ta), 43W (Tc) 2.5W (Ta), 69W (Tc) 2.5W (Ta), 36W (Tc) 2.5W (Ta), 69W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-TDSON-8-6 PG-TDSON-8-6 PG-TDSON-8-6 PG-TDSON-8-6 PG-TDSON-8-6 PG-TDSON-8-6
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

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