BSC0500NSIATMA1
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Infineon Technologies BSC0500NSIATMA1

Manufacturer No:
BSC0500NSIATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSC0500NSIATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 35A/100A TDSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:35A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.3mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:52 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3300 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 69W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-6
Package / Case:8-PowerTDFN
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Similar Products

Part Number BSC0500NSIATMA1 BSC0504NSIATMA1   BSC0501NSIATMA1   BSC0502NSIATMA1   BSC0503NSIATMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 35A (Ta), 100A (Tc) 21A (Ta), 72A (Tc) 29A (Ta), 100A (Tc) 26A (Ta), 100A (Tc) 22A (Ta), 88A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.3mOhm @ 30A, 10V 3.7mOhm @ 30A, 10V 1.9mOhm @ 30A, 10V 2.3mOhm @ 30A, 10V 3mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA 2V @ 250µA 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 52 nC @ 10 V 15 nC @ 10 V 33 nC @ 10 V 26 nC @ 10 V 20 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3300 pF @ 15 V 960 pF @ 15 V 2200 pF @ 15 V 1600 pF @ 15 V 1300 pF @ 15 V
FET Feature - - Schottky Diode (Body) - -
Power Dissipation (Max) 2.5W (Ta), 69W (Tc) 2.5W (Ta), 30W (Tc) 2.5W (Ta), 50W (Tc) 2.5W (Ta), 43W (Tc) 2.5W (Ta), 36W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-TDSON-8-6 PG-TDSON-8-6 PG-TDSON-8-6 PG-TDSON-8-6 PG-TDSON-8-6
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

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