BSC046N02KSGAUMA1
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Infineon Technologies BSC046N02KSGAUMA1

Manufacturer No:
BSC046N02KSGAUMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSC046N02KSGAUMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 19A/80A TDSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:19A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:4.6mOhm @ 50A, 4.5V
Vgs(th) (Max) @ Id:1.2V @ 110µA
Gate Charge (Qg) (Max) @ Vgs:27.6 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:4100 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):2.8W (Ta), 48W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-1
Package / Case:8-PowerTDFN
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$1.87
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Similar Products

Part Number BSC046N02KSGAUMA1 BSC026N02KSGAUMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 19A (Ta), 80A (Tc) 25A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 4.6mOhm @ 50A, 4.5V 2.6mOhm @ 50A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 110µA 1.2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs 27.6 nC @ 4.5 V 52.7 nC @ 4.5 V
Vgs (Max) ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 4100 pF @ 10 V 7800 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 2.8W (Ta), 48W (Tc) 2.8W (Ta), 78W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TDSON-8-1 PG-TDSON-8-1
Package / Case 8-PowerTDFN 8-PowerTDFN

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