BSC040N08NS5ATMA1
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Infineon Technologies BSC040N08NS5ATMA1

Manufacturer No:
BSC040N08NS5ATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSC040N08NS5ATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 80V 100A TDSON
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:3.8V @ 67µA
Gate Charge (Qg) (Max) @ Vgs:54 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3900 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 104W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-7
Package / Case:8-PowerTDFN
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$2.41
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Similar Products

Part Number BSC040N08NS5ATMA1 BSC030N08NS5ATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 80 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 4mOhm @ 50A, 10V 3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 3.8V @ 67µA 3.8V @ 95µA
Gate Charge (Qg) (Max) @ Vgs 54 nC @ 10 V 76 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3900 pF @ 40 V 5600 pF @ 40 V
FET Feature - -
Power Dissipation (Max) 2.5W (Ta), 104W (Tc) 2.5W (Ta), 139W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TDSON-8-7 PG-TDSON-8-7
Package / Case 8-PowerTDFN 8-PowerTDFN

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