BSC0402NSATMA1
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Infineon Technologies BSC0402NSATMA1

Manufacturer No:
BSC0402NSATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSC0402NSATMA1 Datasheet
ECAD Model:
-
Description:
150V, N-CH MOSFET, LOGIC LEVEL,
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
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In Stock

$3.38
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Similar Products

Part Number BSC0402NSATMA1 BSC0902NSATMA1   BSC0403NSATMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
FET Type - N-Channel -
Technology - MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) - 30 V -
Current - Continuous Drain (Id) @ 25°C - 24A (Ta), 100A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) - 4.5V, 10V -
Rds On (Max) @ Id, Vgs - 2.6mOhm @ 30A, 10V -
Vgs(th) (Max) @ Id - 2.2V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs - 26 nC @ 10 V -
Vgs (Max) - ±20V -
Input Capacitance (Ciss) (Max) @ Vds - 1700 pF @ 15 V -
FET Feature - - -
Power Dissipation (Max) - 2.5W (Ta), 48W (Tc) -
Operating Temperature - -55°C ~ 150°C (TJ) -
Mounting Type - Surface Mount -
Supplier Device Package - PG-TDSON-8-6 -
Package / Case - 8-PowerTDFN -

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