BSC0302LSATMA1
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Infineon Technologies BSC0302LSATMA1

Manufacturer No:
BSC0302LSATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSC0302LSATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 120V 12A/99A TDSON
Delivery:
Payment:
iso14001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):120 V
Current - Continuous Drain (Id) @ 25°C:12A (Ta), 99A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2.4V @ 112µA
Gate Charge (Qg) (Max) @ Vgs:79 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7400 pF @ 60 V
FET Feature:- 
Power Dissipation (Max):156W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-7
Package / Case:8-PowerTDFN
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Similar Products

Part Number BSC0302LSATMA1 BSC0702LSATMA1   BSC0802LSATMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Not For New Designs Not For New Designs
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 120 V 60 V 100 V
Current - Continuous Drain (Id) @ 25°C 12A (Ta), 99A (Tc) 100A (Tc) 20A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 8mOhm @ 50A, 10V 2.3mOhm @ 50A, 10V 3.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.4V @ 112µA 2.3V @ 49µA 2.3V @ 115µA
Gate Charge (Qg) (Max) @ Vgs 79 nC @ 10 V 30 nC @ 4.5 V 46 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 7400 pF @ 60 V 4400 pF @ 30 V 6500 pF @ 50 V
FET Feature - Standard -
Power Dissipation (Max) 156W (Tc) 83W (Tc) 156W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-TDSON-8-7 PG-TDSON-8 PG-TDSON-8-7
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

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