BSC029N025SG
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Infineon Technologies BSC029N025SG

Manufacturer No:
BSC029N025SG
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
BSC029N025SG Datasheet
ECAD Model:
-
Description:
N-CHANNEL POWER MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:24A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2.9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2V @ 80µA
Gate Charge (Qg) (Max) @ Vgs:41 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5090 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):2.8W (Ta), 78W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-1
Package / Case:8-PowerTDFN
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Similar Products

Part Number BSC029N025SG BSC029N025S G  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V 25 V
Current - Continuous Drain (Id) @ 25°C 24A (Ta), 100A (Tc) 24A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.9mOhm @ 50A, 10V 2.9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 80µA 2V @ 80µA
Gate Charge (Qg) (Max) @ Vgs 41 nC @ 5 V 41 nC @ 5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5090 pF @ 15 V 5090 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 2.8W (Ta), 78W (Tc) 2.8W (Ta), 78W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TDSON-8-1 PG-TDSON-8-1
Package / Case 8-PowerTDFN 8-PowerTDFN

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