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| Part Number | BSC022N04LSATMA1 | BSC026N04LSATMA1 | BSC032N04LSATMA1 | BSC022N04LS6ATMA1 |
|---|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Status | Active | Active | Active | Active |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V | 40 V | 40 V | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) | 23A (Ta), 100A (Tc) | 21A (Ta), 98A (Tc) | 27A (Ta), 100A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 2.2mOhm @ 50A, 10V | 2.6mOhm @ 50A, 10V | 3.2mOhm @ 50A, 10V | 2.2mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA | 2V @ 250µA | 2V @ 250µA | 2.3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 10 V | 32 nC @ 10 V | 25 nC @ 10 V | 28 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2600 pF @ 20 V | 2300 pF @ 20 V | 1800 pF @ 20 V | 1900 pF @ 20 V |
| FET Feature | - | - | - | - |
| Power Dissipation (Max) | 2.5W (Ta), 69W (Tc) | 2.5W (Ta), 63W (Tc) | 2.5W (Ta), 52W (Tc) | 3W (Ta), 79W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | PG-TDSON-8-6 | PG-TDSON-8-6 | PG-TDSON-8-6 | PG-TDSON-8-1 |
| Package / Case | 8-PowerTDFN | 8-PowerTDFN | 8-PowerTDFN | 8-PowerTDFN |
