BSC022N03SG
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Infineon Technologies BSC022N03SG

Manufacturer No:
BSC022N03SG
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSC022N03SG Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 28A/100A TDSON
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:28A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2.2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2V @ 110µA
Gate Charge (Qg) (Max) @ Vgs:64 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:8290 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):2.8W (Ta), 104W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-1
Package / Case:8-PowerTDFN
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Similar Products

Part Number BSC022N03SG BSC032N03SG   BSC022N03S  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Discontinued at Digi-Key
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 28A (Ta), 100A (Tc) 23A (Ta), 100A (Tc) 28A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.2mOhm @ 50A, 10V 3.2mOhm @ 50A, 10V 2.2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 110µA 2V @ 70µA 2V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 64 nC @ 5 V 39 nC @ 5 V 58 nC @ 5 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 8290 pF @ 15 V 5080 pF @ 15 V 7490 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) 2.8W (Ta), 104W (Tc) 2.8W (Ta), 78W (Tc) 2.8W (Ta), 104W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-TDSON-8-1 PG-TDSON-8-1 PG-TDSON-8-1
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

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