BSC021N08NS5ATMA1
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Infineon Technologies BSC021N08NS5ATMA1

Manufacturer No:
BSC021N08NS5ATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSC021N08NS5ATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET TRENCH 80V TSON-8
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:2.1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:3.8V @ 146µA
Gate Charge (Qg) (Max) @ Vgs:29 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:8600 pF @ 40 V
FET Feature:Standard
Power Dissipation (Max):214W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TSON-8-3
Package / Case:8-PowerTDFN
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$5.03
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Similar Products

Part Number BSC021N08NS5ATMA1 BSC061N08NS5ATMA1   BSC026N08NS5ATMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 80 V 80 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 82A (Tc) 23A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 2.1mOhm @ 50A, 10V 6.1mOhm @ 41A, 10V 2.6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 3.8V @ 146µA 3.8V @ 41µA 3.8V @ 115µA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V 33 nC @ 10 V 92 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 8600 pF @ 40 V 2500 pF @ 40 V 6800 pF @ 40 V
FET Feature Standard - -
Power Dissipation (Max) 214W (Tc) 2.5W (Ta), 74W (Tc) 2.5W (Ta), 156W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-TSON-8-3 PG-TDSON-8-7 PG-TDSON-8-6
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

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