BSC019N04LSTATMA1
  • Share:

Infineon Technologies BSC019N04LSTATMA1

Manufacturer No:
BSC019N04LSTATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSC019N04LSTATMA1 Datasheet
ECAD Model:
-
Description:
DIFFERENTIATED MOSFETS
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:28A (Ta), 161A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
0 Remaining View Similar

In Stock

$1.44
393

Please send RFQ , we will respond immediately.

Similar Products

Part Number BSC019N04LSTATMA1 BSC010N04LSTATMA1   BSC014N04LSTATMA1   BSC019N04LSATMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active
FET Type - N-Channel N-Channel N-Channel
Technology - MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 28A (Ta), 161A (Tc) 39A (Ta), 100A (Tc) 33A (Ta), 100A (Tc) 27A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs - 1mOhm @ 50A, 10V 1.4mOhm @ 50A, 10V 1.9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id - 2V @ 250µA 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - 133 nC @ 10 V 85 nC @ 10 V 41 nC @ 10 V
Vgs (Max) - ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds - 9520 pF @ 20 V 6020 pF @ 20 V 2900 pF @ 20 V
FET Feature - - - -
Power Dissipation (Max) - 3W (Ta), 167W (Tc) 3W (Ta), 115W (Tc) 2.5W (Ta), 78W (Tc)
Operating Temperature - -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type - Surface Mount Surface Mount Surface Mount
Supplier Device Package - PG-TDSON-8 FL PG-TDSON-8 FL PG-TDSON-8-1
Package / Case - 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

Related Product By Categories

SFR2955TM
SFR2955TM
Fairchild Semiconductor
P-CHANNEL POWER MOSFET
FQPF28N15
FQPF28N15
Fairchild Semiconductor
MOSFET N-CH 150V 16.7A TO220F
IRLS3036TRLPBF
IRLS3036TRLPBF
Infineon Technologies
MOSFET N-CH 60V 195A D2PAK
FQD24N08TF
FQD24N08TF
Fairchild Semiconductor
MOSFET N-CH 80V 19.6A DPAK
SIHP5N50D-E3
SIHP5N50D-E3
Vishay Siliconix
MOSFET N-CH 500V 5.3A TO220AB
94-3250
94-3250
Infineon Technologies
MOSFET N-CH 30V 12A DIRECTFET
NTMS4700NR2G
NTMS4700NR2G
onsemi
MOSFET N-CH 30V 8.6A 8SOIC
BTS244Z E3043
BTS244Z E3043
Infineon Technologies
MOSFET N-CH 55V 35A TO220-5-43
IXKH30N60C5
IXKH30N60C5
IXYS
MOSFET N-CH 600V 30A TO247AD
NTD4905NT4G
NTD4905NT4G
onsemi
MOSFET N-CH 30V 12A/67A DPAK
IRFR430ATRRPBF
IRFR430ATRRPBF
Vishay Siliconix
MOSFET N-CH 500V 5A DPAK
BSR606NH6327XTSA1
BSR606NH6327XTSA1
Infineon Technologies
MOSFET N-CH 60V 2.3A SC59

Related Product By Brand

IRFP2907PBF
IRFP2907PBF
Infineon Technologies
MOSFET N-CH 75V 209A TO247AC
IRFR120NTRLPBF
IRFR120NTRLPBF
Infineon Technologies
MOSFET N-CH 100V 9.4A DPAK
IRFP7537PBF
IRFP7537PBF
Infineon Technologies
MOSFET N-CH 60V 172A TO247
BSZ0902NSATMA1
BSZ0902NSATMA1
Infineon Technologies
MOSFET N-CH 30V 19A/40A TSDSON
BSP149H6906XTSA1
BSP149H6906XTSA1
Infineon Technologies
MOSFET N-CH 200V 660MA SOT223-4
AUIRLS4030
AUIRLS4030
Infineon Technologies
MOSFET N-CH 100V 180A D2PAK
SAK-TC1797-384F150EAC
SAK-TC1797-384F150EAC
Infineon Technologies
32-BIT RISC FLASH MCU
IR21368STRPBF
IR21368STRPBF
Infineon Technologies
IC GATE DRVR HALF-BRIDGE 28SOIC
BTS6133D
BTS6133D
Infineon Technologies
BUFFER/INVERTER BASED PERIPHERAL
CY7C68013A-56PVXC
CY7C68013A-56PVXC
Infineon Technologies
IC MCU USB PERIPH HI SPD 56SSOP
S6E2CCAJ0AGB1000A
S6E2CCAJ0AGB1000A
Infineon Technologies
IC MCU 32BIT 2MB FLASH 192FBGA
STK14CA8-NF45TR
STK14CA8-NF45TR
Infineon Technologies
IC NVSRAM 1MBIT PARALLEL 32SOIC