Infineon Technologies-BSC019N02KSGAUMA1 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20 V
Current - Continuous Drain (Id) @ 25°C:	30A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 4.5V
Rds On (Max) @ Id, Vgs:	1.95mOhm @ 50A, 4.5V
Vgs(th) (Max) @ Id:	1.2V @ 350µA
Gate Charge (Qg) (Max) @ Vgs:	85 nC @ 4.5 V
Vgs (Max):	±12V
Input Capacitance (Ciss) (Max) @ Vds:	13000 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	2.8W (Ta), 104W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-TDSON-8-1
Package / Case:	8-PowerTDFN

Infineon Technologies BSC019N02KSGAUMA1