BSC017N04NSGATMA1
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Infineon Technologies BSC017N04NSGATMA1

Manufacturer No:
BSC017N04NSGATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSC017N04NSGATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 40V 30A/100A TDSON
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:30A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:4V @ 85µA
Gate Charge (Qg) (Max) @ Vgs:108 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:8800 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 139W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-1
Package / Case:8-PowerTDFN
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Similar Products

Part Number BSC017N04NSGATMA1 BSC019N04NSGATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 30A (Ta), 100A (Tc) 30A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 1.7mOhm @ 50A, 10V 1.9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 85µA 4V @ 85µA
Gate Charge (Qg) (Max) @ Vgs 108 nC @ 10 V 108 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 8800 pF @ 20 V 8800 pF @ 20 V
FET Feature - -
Power Dissipation (Max) 2.5W (Ta), 139W (Tc) 2.5W (Ta), 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TDSON-8-1 PG-TDSON-8-1
Package / Case 8-PowerTDFN 8-PowerTDFN

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