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| Part Number | BSC012N06NSATMA1 | BSC016N06NSATMA1 | BSC014N06NSATMA1 | BSC019N06NSATMA1 |
|---|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Status | Active | Active | Active | Active |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V | 60 V | 60 V | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 36A (Ta), 306A (Tc) | 30A (Ta), 100A (Tc) | 30A (Ta), 100A (Tc) | 100A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | 6V, 10V | 6V, 10V | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 1.2mOhm @ 50A, 10V | 1.6mOhm @ 50A, 10V | 1.45mOhm @ 50A, 10V | 1.95mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id | 3.3V @ 147µA | 2.8V @ 95µA | 2.8V @ 120µA | 3.3V @ 74µA |
| Gate Charge (Qg) (Max) @ Vgs | 143 nC @ 10 V | 71 nC @ 10 V | 89 nC @ 10 V | 77 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 11000 pF @ 30 V | 5200 pF @ 30 V | 6500 pF @ 30 V | 5250 pF @ 30 V |
| FET Feature | - | - | - | - |
| Power Dissipation (Max) | 214W (Tc) | 2.5W (Ta), 139W (Tc) | 2.5W (Ta), 156W (Tc) | 136W (Ta) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | PG-TSON-8-3 | PG-TDSON-8 FL | PG-TDSON-8-17 | PG-TDSON-8 FL |
| Package / Case | 8-PowerTDFN | 8-PowerTDFN | 8-PowerTDFN | 8-PowerTDFN |
