BSC010N04LSIATMA1
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Infineon Technologies BSC010N04LSIATMA1

Manufacturer No:
BSC010N04LSIATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSC010N04LSIATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 40V 37A/100A TDSON
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:37A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.05mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:87 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6200 pF @ 20 V
FET Feature:Schottky Diode (Body)
Power Dissipation (Max):2.5W (Ta), 139W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8 FL
Package / Case:8-PowerTDFN
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$3.98
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Similar Products

Part Number BSC010N04LSIATMA1 BSC010N04LSTATMA1   BSC014N04LSIATMA1   BSC010N04LS6ATMA1   BSC010N04LSATMA1   BSC010N04LSCATMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel -
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 40 V 40 V 40 V 40 V 40 V -
Current - Continuous Drain (Id) @ 25°C 37A (Ta), 100A (Tc) 39A (Ta), 100A (Tc) 31A (Ta), 100A (Tc) 40A (Ta), 100A (Tc) 38A (Ta), 100A (Tc) 282A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V -
Rds On (Max) @ Id, Vgs 1.05mOhm @ 50A, 10V 1mOhm @ 50A, 10V 1.45mOhm @ 50A, 10V 1mOhm @ 50A, 10V 1mOhm @ 50A, 10V -
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA 2V @ 250µA 2.3V @ 250µA 2V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 87 nC @ 10 V 133 nC @ 10 V 55 nC @ 10 V 67 nC @ 4.5 V 95 nC @ 10 V -
Vgs (Max) ±20V ±20V ±20V ±20V ±20V -
Input Capacitance (Ciss) (Max) @ Vds 6200 pF @ 20 V 9520 pF @ 20 V 4000 pF @ 20 V 4600 pF @ 20 V 6800 pF @ 20 V -
FET Feature Schottky Diode (Body) - - - - -
Power Dissipation (Max) 2.5W (Ta), 139W (Tc) 3W (Ta), 167W (Tc) 2.5W (Ta), 96W (Tc) 3W (Ta), 150W (Tc) 2.5W (Ta), 139W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount -
Supplier Device Package PG-TDSON-8 FL PG-TDSON-8 FL PG-TDSON-8 FL PG-TDSON-8-6 PG-TDSON-8 FL -
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN -

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