BSC010N04LSATMA1
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Infineon Technologies BSC010N04LSATMA1

Manufacturer No:
BSC010N04LSATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSC010N04LSATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 40V 38A/100A TDSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:38A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:95 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6800 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 139W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8 FL
Package / Case:8-PowerTDFN
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Similar Products

Part Number BSC010N04LSATMA1 BSC019N04LSATMA1   BSC010N04LSTATMA1   BSC014N04LSATMA1   BSC010N04LSIATMA1   BSC010N04LSCATMA1   BSC010N04LS6ATMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel - N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 40 V 40 V 40 V - 40 V
Current - Continuous Drain (Id) @ 25°C 38A (Ta), 100A (Tc) 27A (Ta), 100A (Tc) 39A (Ta), 100A (Tc) 32A (Ta), 100A (Tc) 37A (Ta), 100A (Tc) 282A (Tc) 40A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V - 4.5V, 10V
Rds On (Max) @ Id, Vgs 1mOhm @ 50A, 10V 1.9mOhm @ 50A, 10V 1mOhm @ 50A, 10V 1.4mOhm @ 50A, 10V 1.05mOhm @ 50A, 10V - 1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA 2V @ 250µA 2V @ 250µA 2V @ 250µA - 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 95 nC @ 10 V 41 nC @ 10 V 133 nC @ 10 V 61 nC @ 10 V 87 nC @ 10 V - 67 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V - ±20V
Input Capacitance (Ciss) (Max) @ Vds 6800 pF @ 20 V 2900 pF @ 20 V 9520 pF @ 20 V 4300 pF @ 20 V 6200 pF @ 20 V - 4600 pF @ 20 V
FET Feature - - - - Schottky Diode (Body) - -
Power Dissipation (Max) 2.5W (Ta), 139W (Tc) 2.5W (Ta), 78W (Tc) 3W (Ta), 167W (Tc) 2.5W (Ta), 96W (Tc) 2.5W (Ta), 139W (Tc) - 3W (Ta), 150W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) - -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount - Surface Mount
Supplier Device Package PG-TDSON-8 FL PG-TDSON-8-1 PG-TDSON-8 FL SuperSO8 PG-TDSON-8 FL - PG-TDSON-8-6
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN - 8-PowerTDFN

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