BSC009NE2LSATMA1
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Infineon Technologies BSC009NE2LSATMA1

Manufacturer No:
BSC009NE2LSATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSC009NE2LSATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 25V 41A/100A TDSON
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:41A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:0.9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:126 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5800 pF @ 12 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 96W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-7
Package / Case:8-PowerTDFN
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Similar Products

Part Number BSC009NE2LSATMA1 BSC009NE2LS5ATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V 25 V
Current - Continuous Drain (Id) @ 25°C 41A (Ta), 100A (Tc) 41A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 0.9mOhm @ 30A, 10V 0.9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 126 nC @ 10 V 57 nC @ 10 V
Vgs (Max) ±20V ±16V
Input Capacitance (Ciss) (Max) @ Vds 5800 pF @ 12 V 3900 pF @ 12 V
FET Feature - -
Power Dissipation (Max) 2.5W (Ta), 96W (Tc) 2.5W (Ta), 74W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TDSON-8-7 PG-TDSON-8-7
Package / Case 8-PowerTDFN 8-PowerTDFN

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