BSC009NE2LSATMA1
  • Share:

Infineon Technologies BSC009NE2LSATMA1

Manufacturer No:
BSC009NE2LSATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSC009NE2LSATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 25V 41A/100A TDSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:41A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:0.9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:126 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5800 pF @ 12 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 96W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-7
Package / Case:8-PowerTDFN
0 Remaining View Similar

In Stock

$2.36
169

Please send RFQ , we will respond immediately.

Similar Products

Part Number BSC009NE2LSATMA1 BSC009NE2LS5ATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V 25 V
Current - Continuous Drain (Id) @ 25°C 41A (Ta), 100A (Tc) 41A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 0.9mOhm @ 30A, 10V 0.9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 126 nC @ 10 V 57 nC @ 10 V
Vgs (Max) ±20V ±16V
Input Capacitance (Ciss) (Max) @ Vds 5800 pF @ 12 V 3900 pF @ 12 V
FET Feature - -
Power Dissipation (Max) 2.5W (Ta), 96W (Tc) 2.5W (Ta), 74W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TDSON-8-7 PG-TDSON-8-7
Package / Case 8-PowerTDFN 8-PowerTDFN

Related Product By Categories

HUF75631S3S
HUF75631S3S
Fairchild Semiconductor
N CHANNEL ULTRAFET 100V, 33A, 4
STL33N60M2
STL33N60M2
STMicroelectronics
MOSFET N-CH 600V 22A PWRFLAT HV
PJS6413_S1_00001
PJS6413_S1_00001
Panjit International Inc.
20V P-CHANNEL ENHANCEMENT MODE M
IRF7832TRPBF
IRF7832TRPBF
Infineon Technologies
MOSFET N-CH 30V 20A 8SO
PMV100EPAR
PMV100EPAR
Nexperia USA Inc.
MOSFET P-CH 60V 2.2A TO236AB
STP80NF55L-06
STP80NF55L-06
STMicroelectronics
MOSFET N-CH 55V 80A TO220AB
PJC7439_R1_00001
PJC7439_R1_00001
Panjit International Inc.
60V P-CHANNEL ENHANCEMENT MODE M
IXTP230N04T4M
IXTP230N04T4M
IXYS
MOSFET N-CH 40V 230A TO220
STF38N65M5
STF38N65M5
STMicroelectronics
MOSFET N-CH 650V 30A TO220FP
IRF2804STRL
IRF2804STRL
Infineon Technologies
MOSFET N-CH 40V 75A D2PAK
SI8435DB-T1-E1
SI8435DB-T1-E1
Vishay Siliconix
MOSFET P-CH 20V 10A 4MICROFOOT
IRFR4615PBF
IRFR4615PBF
Infineon Technologies
MOSFET N-CH 150V 33A DPAK

Related Product By Brand

OUTOFSHAFTFOR3D2GOTOBO1
OUTOFSHAFTFOR3D2GOTOBO1
Infineon Technologies
OUT OF SHAFT FOR 3D 2 GO
IRF7755TRPBF
IRF7755TRPBF
Infineon Technologies
MOSFET 2P-CH 20V 3.9A 8TSSOP
SPD50P03LGXT
SPD50P03LGXT
Infineon Technologies
MOSFET P-CH 30V 50A TO252-5
IRG4PC40WPBF
IRG4PC40WPBF
Infineon Technologies
IGBT 600V 40A 160W TO247AC
IRGS4640DTRRPBF
IRGS4640DTRRPBF
Infineon Technologies
DIODE 600V 24A D2PAK
XC2263N40F66LABFXUMA1
XC2263N40F66LABFXUMA1
Infineon Technologies
IC MCU 16/32B 320KB FLSH 100LQFP
TLD5097ELXUMA1
TLD5097ELXUMA1
Infineon Technologies
IC LED DRIVER CTRLR PWM 14SSOP
IM512L6AXKMA1
IM512L6AXKMA1
Infineon Technologies
CIPOS MINI COOLMOS
MB90549GPF-G-358
MB90549GPF-G-358
Infineon Technologies
IC MCU 16BIT 256KB MROM 100QFP
MB90F342ESPF-GS
MB90F342ESPF-GS
Infineon Technologies
IC MCU 16BIT 256KB FLASH 100QFP
MB90349CASPFV-GS-504E1
MB90349CASPFV-GS-504E1
Infineon Technologies
IC MCU 16BIT 256KB MROM 100LQFP
S29GL256P11FAI022
S29GL256P11FAI022
Infineon Technologies
IC FLASH 256MBIT PARALLEL 64FBGA