Infineon Technologies-BSB056N10NN3GXUMA1 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100 V
Current - Continuous Drain (Id) @ 25°C:	9A (Ta), 83A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Rds On (Max) @ Id, Vgs:	5.6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:	3.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:	74 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	5500 pF @ 50 V
FET Feature:	-
Power Dissipation (Max):	2.8W (Ta), 78W (Tc)
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	MG-WDSON-2, CanPAK M™
Package / Case:	3-WDSON

Infineon Technologies BSB056N10NN3GXUMA1