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| Part Number | BSB017N03LX3 G | BSB012N03LX3 G |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Status | Obsolete | Obsolete |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 32A (Ta), 147A (Tc) | 39A (Ta), 180A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 1.7mOhm @ 30A, 10V | 1.2mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA | 2.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 102 nC @ 10 V | 169 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 7800 pF @ 15 V | 16900 pF @ 15 V |
| FET Feature | - | - |
| Power Dissipation (Max) | 2.8W (Ta), 57W (Tc) | 2.8W (Ta), 89W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Supplier Device Package | MG-WDSON-2, CanPAK M™ | MG-WDSON-2, CanPAK M™ |
| Package / Case | 3-WDSON | 3-WDSON |
