BSB013NE2LXIXUMA1
  • Share:

Infineon Technologies BSB013NE2LXIXUMA1

Manufacturer No:
BSB013NE2LXIXUMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSB013NE2LXIXUMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 25V 36A/163A 2WDSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:36A (Ta), 163A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.3mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:62 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4400 pF @ 12 V
FET Feature:- 
Power Dissipation (Max):2.8W (Ta), 57W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:MG-WDSON-2, CanPAK M™
Package / Case:3-WDSON
0 Remaining View Similar

In Stock

$1.93
458

Please send RFQ , we will respond immediately.

Similar Products

Part Number BSB013NE2LXIXUMA1 BSB012NE2LXIXUMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V 25 V
Current - Continuous Drain (Id) @ 25°C 36A (Ta), 163A (Tc) 170A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.3mOhm @ 30A, 10V 1.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 62 nC @ 10 V 82 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4400 pF @ 12 V 5852 pF @ 12 V
FET Feature - -
Power Dissipation (Max) 2.8W (Ta), 57W (Tc) 2.8W (Ta), 57W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package MG-WDSON-2, CanPAK M™ MG-WDSON-2, CanPAK M™
Package / Case 3-WDSON 3-WDSON

Related Product By Categories

IRFZ46NPBF
IRFZ46NPBF
Infineon Technologies
MOSFET N-CH 55V 53A TO220AB
RF1K4915696
RF1K4915696
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
GC20N65F
GC20N65F
Goford Semiconductor
N650V,RD(MAX)<170M@10V,VTH2.5V~4
DMN6040SK3-13
DMN6040SK3-13
Diodes Incorporated
MOSFET N CH 60V 20A TO252
AUIRF7749L2TR
AUIRF7749L2TR
Infineon Technologies
MOSFET N-CH 60V 36A DIRECTFET
STW7N90K5
STW7N90K5
STMicroelectronics
MOSFET N-CH 900V 7A TO247-3
ZXM64N02XTA
ZXM64N02XTA
Diodes Incorporated
MOSFET N-CH 20V 5.4A 8MSOP
IPP80N06S3L-08
IPP80N06S3L-08
Infineon Technologies
MOSFET N-CH 55V 80A TO220-3
STP35N65M5
STP35N65M5
STMicroelectronics
MOSFET N-CH 650V 27A TO220AB
IPP65R074C6XKSA1
IPP65R074C6XKSA1
Infineon Technologies
MOSFET N-CH 650V 57.7A TO220-3
R6535KNX3C16
R6535KNX3C16
Rohm Semiconductor
650V 35A, TO-220AB, HIGH-SPEED S
RF4E110GNTR
RF4E110GNTR
Rohm Semiconductor
MOSFET N-CH 30V 11A HUML2020L8

Related Product By Brand

BAT1504RE6327HTSA1
BAT1504RE6327HTSA1
Infineon Technologies
RF DIODE SCHOTTKY 4V SOT23-3
IPI126N10N3GXKSA1
IPI126N10N3GXKSA1
Infineon Technologies
N-CHANNEL POWER MOSFET
SAK-XC888CM-8FFA AB
SAK-XC888CM-8FFA AB
Infineon Technologies
IC MCU 8BIT 32KB FLASH 64TQFP
C167CSL16M3VCAFXQLA1
C167CSL16M3VCAFXQLA1
Infineon Technologies
IC MCU 16BIT ROMLESS 144MQFP
ADM6992FX-AB-T-1
ADM6992FX-AB-T-1
Infineon Technologies
IC ETHERNET CONVERTER OAM 128PIN
TLE7278-2EV50
TLE7278-2EV50
Infineon Technologies
IC REG LINEAR FIXED LDO REG
MB95F128JBPMC-G-JNE1
MB95F128JBPMC-G-JNE1
Infineon Technologies
IC MCU 8BIT 60KB FLASH 100LQFP
CY9BF368RBGL-GK7E1
CY9BF368RBGL-GK7E1
Infineon Technologies
IC MCU 32BIT 1.03125MB 144FBGA
CY9BF504RPMC-GE1
CY9BF504RPMC-GE1
Infineon Technologies
IC MCU 32BIT 256KB FLASH 120LQFP
MB96345RSAPMC-GS-112E1
MB96345RSAPMC-GS-112E1
Infineon Technologies
IC MCU 16BIT 160KB MROM 100LQFP
S29GL01GS10FHSS40
S29GL01GS10FHSS40
Infineon Technologies
IC FLASH 1GBIT PARALLEL 64FBGA
CY9AF131KAQN-G-104-AVE2
CY9AF131KAQN-G-104-AVE2
Infineon Technologies
IC MEM MM MCU 48QFN