BSB012NE2LXIXUMA1
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Infineon Technologies BSB012NE2LXIXUMA1

Manufacturer No:
BSB012NE2LXIXUMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSB012NE2LXIXUMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 25V 170A 2WDSON
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:170A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:82 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5852 pF @ 12 V
FET Feature:- 
Power Dissipation (Max):2.8W (Ta), 57W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:MG-WDSON-2, CanPAK M™
Package / Case:3-WDSON
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Similar Products

Part Number BSB012NE2LXIXUMA1 BSB013NE2LXIXUMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V 25 V
Current - Continuous Drain (Id) @ 25°C 170A (Tc) 36A (Ta), 163A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.2mOhm @ 30A, 10V 1.3mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 82 nC @ 10 V 62 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5852 pF @ 12 V 4400 pF @ 12 V
FET Feature - -
Power Dissipation (Max) 2.8W (Ta), 57W (Tc) 2.8W (Ta), 57W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package MG-WDSON-2, CanPAK M™ MG-WDSON-2, CanPAK M™
Package / Case 3-WDSON 3-WDSON

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