BSB012NE2LXIXUMA1
  • Share:

Infineon Technologies BSB012NE2LXIXUMA1

Manufacturer No:
BSB012NE2LXIXUMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSB012NE2LXIXUMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 25V 170A 2WDSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:170A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:82 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5852 pF @ 12 V
FET Feature:- 
Power Dissipation (Max):2.8W (Ta), 57W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:MG-WDSON-2, CanPAK M™
Package / Case:3-WDSON
0 Remaining View Similar

In Stock

-
325

Please send RFQ , we will respond immediately.

Similar Products

Part Number BSB012NE2LXIXUMA1 BSB013NE2LXIXUMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V 25 V
Current - Continuous Drain (Id) @ 25°C 170A (Tc) 36A (Ta), 163A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.2mOhm @ 30A, 10V 1.3mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 82 nC @ 10 V 62 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5852 pF @ 12 V 4400 pF @ 12 V
FET Feature - -
Power Dissipation (Max) 2.8W (Ta), 57W (Tc) 2.8W (Ta), 57W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package MG-WDSON-2, CanPAK M™ MG-WDSON-2, CanPAK M™
Package / Case 3-WDSON 3-WDSON

Related Product By Categories

FQPF9N25CT
FQPF9N25CT
Fairchild Semiconductor
MOSFET N-CH 250V 8.8A TO220F
PH3120L,115
PH3120L,115
NXP Semiconductors
NEXPERIA PH3120L - 100A, 20V, 0.
SI4434DY-T1-GE3
SI4434DY-T1-GE3
Vishay Siliconix
MOSFET N-CH 250V 2.1A 8SO
SUM90P10-19L-E3
SUM90P10-19L-E3
Vishay Siliconix
MOSFET P-CH 100V 90A TO263
FDME820NZT
FDME820NZT
onsemi
MOSFET N-CH 20V 9A MICROFET
IRLL014TRPBF-BE3
IRLL014TRPBF-BE3
Vishay Siliconix
MOSFET N-CH 60V 2.7A SOT223
SIR872ADP-T1-GE3
SIR872ADP-T1-GE3
Vishay Siliconix
MOSFET N-CH 150V 53.7A PPAK SO-8
FDS3590
FDS3590
onsemi
MOSFET N-CH 80V 6.5A 8SOIC
SI7880ADP-T1-GE3
SI7880ADP-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 40A PPAK SO-8
IRF1405LPBF
IRF1405LPBF
Infineon Technologies
MOSFET N-CH 55V 131A TO262
NVD5805NT4G
NVD5805NT4G
onsemi
MOSFET N-CH 40V 51A DPAK
RD3G600GNTL
RD3G600GNTL
Rohm Semiconductor
MOSFET N-CH 40V 60A TO252

Related Product By Brand

ESD207B102ELSE6327XTSA1
ESD207B102ELSE6327XTSA1
Infineon Technologies
TVS DIODE 3.3VWM 8.1VC TSSLP-2-3
BAS28E6327HTSA1
BAS28E6327HTSA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT143
BSZ105N04NSG
BSZ105N04NSG
Infineon Technologies
OPTLMOS POWER-MOSFET
TDA6170X
TDA6170X
Infineon Technologies
AUDIO DEMODULATOR, FM
2EDN8524FXTMA1
2EDN8524FXTMA1
Infineon Technologies
IC GATE DRVR LOW-SIDE DSO8
IHW20N65R5
IHW20N65R5
Infineon Technologies
INSULATED GATE BIPOLAR TRANSISTO
CY25200KFZXCT
CY25200KFZXCT
Infineon Technologies
IC CLOCK GEN PROG SPECT 16-TSSOP
CY90F362TESPMCR-GN9E1
CY90F362TESPMCR-GN9E1
Infineon Technologies
IC MCU 16BIT 64KB FLASH 48LQFP
S79FL256SDSMFBG03
S79FL256SDSMFBG03
Infineon Technologies
IC FLASH 512MBIT SPI/QUAD 16SOIC
CY7C1568KV18-400BZXCT
CY7C1568KV18-400BZXCT
Infineon Technologies
IC SRAM 72MBIT PARALLEL 165FBGA
CY7C0832V-133AXC
CY7C0832V-133AXC
Infineon Technologies
IC SRAM 4.5MBIT PARALLEL 120TQFP
S25FL116K0XMFV013
S25FL116K0XMFV013
Infineon Technologies
IC FLASH 16MBIT SPI/QUAD 8SOIC