BSB012NE2LXIXUMA1
  • Share:

Infineon Technologies BSB012NE2LXIXUMA1

Manufacturer No:
BSB012NE2LXIXUMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSB012NE2LXIXUMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 25V 170A 2WDSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:170A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:82 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5852 pF @ 12 V
FET Feature:- 
Power Dissipation (Max):2.8W (Ta), 57W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:MG-WDSON-2, CanPAK M™
Package / Case:3-WDSON
0 Remaining View Similar

In Stock

-
325

Please send RFQ , we will respond immediately.

Similar Products

Part Number BSB012NE2LXIXUMA1 BSB013NE2LXIXUMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V 25 V
Current - Continuous Drain (Id) @ 25°C 170A (Tc) 36A (Ta), 163A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.2mOhm @ 30A, 10V 1.3mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 82 nC @ 10 V 62 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5852 pF @ 12 V 4400 pF @ 12 V
FET Feature - -
Power Dissipation (Max) 2.8W (Ta), 57W (Tc) 2.8W (Ta), 57W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package MG-WDSON-2, CanPAK M™ MG-WDSON-2, CanPAK M™
Package / Case 3-WDSON 3-WDSON

Related Product By Categories

MMFTN138
MMFTN138
Diotec Semiconductor
MOSFET N-CH 50V 220MA SOT23-3
FQD7N20LTM
FQD7N20LTM
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 5
IPS60R360PFD7SAKMA1
IPS60R360PFD7SAKMA1
Infineon Technologies
MOSFET N-CH 650V 10A TO251-3
NP100P04PDG-E1-AY
NP100P04PDG-E1-AY
Renesas Electronics America Inc
MOSFET P-CH 40V 100A TO263
AUIRFS8407-7P
AUIRFS8407-7P
Infineon Technologies
MOSFET N-CH 40V 240A D2PAK-7
SSM3J35AMFV,L3F
SSM3J35AMFV,L3F
Toshiba Semiconductor and Storage
MOSFET P-CH 20V 250MA VESM
IRFR320TRPBF
IRFR320TRPBF
Vishay Siliconix
MOSFET N-CH 400V 3.1A DPAK
NVMFS5C460NLWFAFT1G
NVMFS5C460NLWFAFT1G
onsemi
MOSFET N-CH 40V 21A/78A 5DFN
DMP3045LVT-13
DMP3045LVT-13
Diodes Incorporated
MOSFET BVDSS: 25V~30V TSOT26 T&R
STP10NK70ZFP
STP10NK70ZFP
STMicroelectronics
MOSFET N-CH 700V 8.6A TO220FP
PH9930L,115
PH9930L,115
NXP USA Inc.
MOSFET N-CH 30V 63A LFPAK56
AO4202_120
AO4202_120
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 30V 19A 8SOIC

Related Product By Brand

BC 818-40 E6327
BC 818-40 E6327
Infineon Technologies
TRANS NPN 25V 0.5A SOT23
IPB049N08N5ATMA1
IPB049N08N5ATMA1
Infineon Technologies
MOSFET N-CH 80V 80A D2PAK
FP30R06YE3B4BOMA1
FP30R06YE3B4BOMA1
Infineon Technologies
IGBT MODULE LOW PWR EASY2-1
XC2268I136F128LRAAKXUMA1
XC2268I136F128LRAAKXUMA1
Infineon Technologies
IC MCU 16/32BIT 1MB FLASH
IR3840MTR1PBF
IR3840MTR1PBF
Infineon Technologies
IC REG BUCK ADJUSTABLE 12A PQFN
CY37128VP160-125AXI
CY37128VP160-125AXI
Infineon Technologies
IC CPLD 128MC 10NS 160LQFP
S6E2C29J0AGB1000A
S6E2C29J0AGB1000A
Infineon Technologies
IC MCU 32BIT 1.5MB FLASH 192FBGA
MB90F347ASPF-GSE1
MB90F347ASPF-GSE1
Infineon Technologies
IC MCU 16BIT 128KB FLASH 100QFP
S25FL127SABMFV001
S25FL127SABMFV001
Infineon Technologies
IC FLASH 128MBIT SPI/QUAD 16SOIC
CY7C1021CV33-15ZXCT
CY7C1021CV33-15ZXCT
Infineon Technologies
IC SRAM 1MBIT PARALLEL 44TSOP II
CY7C1512KV18-300BZI
CY7C1512KV18-300BZI
Infineon Technologies
IC SRAM 72MBIT PARALLEL 165FBGA
S25FL164K0XNFV010
S25FL164K0XNFV010
Infineon Technologies
IC FLASH 64MBIT SPI/QUAD 8WSON