Infineon Technologies-BGB 540 E6327 - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	3.5V
Frequency - Transition:	-
Noise Figure (dB Typ @ f):	1.3dB ~ 2dB @ 900MHz ~ 1.8GHz
Gain:	16dB ~ 17.5dB
Power - Max:	120mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	-
Current - Collector (Ic) (Max):	30mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-82A, SOT-343
Supplier Device Package:	PG-SOT343-3D

Infineon Technologies BGB 540 E6327