Infineon Technologies-BFY193PZZZA1 - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	12V
Frequency - Transition:	7.5GHz
Noise Figure (dB Typ @ f):	2.3dB ~ 2.9dB @ 2GHz
Gain:	12.5dB ~ 13.5dB
Power - Max:	580mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	50 @ 30mA, 8V
Current - Collector (Ic) (Max):	80mA
Operating Temperature:	200°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	MICRO-X1
Supplier Device Package:	MICRO-X1

Infineon Technologies BFY193PZZZA1