Infineon Technologies-BFT92E6327 - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	PNP
Voltage - Collector Emitter Breakdown (Max):	15V
Frequency - Transition:	5GHz
Noise Figure (dB Typ @ f):	2dB ~ 3.2dB @ 900MHz ~ 1.8GHz
Gain:	8dB ~ 13.5dB
Power - Max:	200mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	15 @ 15mA, 8V
Current - Collector (Ic) (Max):	25mA
Operating Temperature:	-
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	PG-SOT23

Infineon Technologies BFT92E6327