Infineon Technologies-BFS17PE6752HTSA1 - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	15V
Frequency - Transition:	1.4GHz
Noise Figure (dB Typ @ f):	3.5dB @ 800MHz
Gain:	-
Power - Max:	280mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	40 @ 2mA, 1V
Current - Collector (Ic) (Max):	25mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	PG-SOT23

Infineon Technologies BFS17PE6752HTSA1