Infineon Technologies-BFS 469L6 E6327 - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max):	5V, 10V
Frequency - Transition:	22GHz, 9GHz
Noise Figure (dB Typ @ f):	1.1dB ~ 1.4dB @ 1.8GHz ~ 3GHz
Gain:	14.5dB
Power - Max:	200mW, 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	130 @ 20mA, 3V / 100 @ 5mA, 3V
Current - Collector (Ic) (Max):	50mA, 70mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	6-XFDFN
Supplier Device Package:	TSLP-6-1

Infineon Technologies BFS 469L6 E6327