Infineon Technologies-BFS 466L6 E6327 - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max):	5V, 9V
Frequency - Transition:	22GHz, 14GHz
Noise Figure (dB Typ @ f):	1.1dB ~ 1.4dB @ 1.8GHz ~ 3GHz
Gain:	12dB ~ 17dB
Power - Max:	200mW, 210mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	90 @ 20mA, 3V / 90 @ 15mA, 3V
Current - Collector (Ic) (Max):	50mA, 35mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	6-XFDFN
Supplier Device Package:	TSLP-6-1

Infineon Technologies BFS 466L6 E6327