Infineon Technologies-BFS 386L6 E6327 - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max):	6V
Frequency - Transition:	14GHz
Noise Figure (dB Typ @ f):	1dB ~ 1.6dB @ 1.8GHz ~ 3GHz
Gain:	10dB ~ 14.5dB
Power - Max:	210mW, 380mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	60 @ 15mA, 3V / 60 @ 40mA, 3V
Current - Collector (Ic) (Max):	35mA, 80mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	6-XFDFN
Supplier Device Package:	TSLP-6-1

Infineon Technologies BFS 386L6 E6327