Infineon Technologies-BFR949L3E6327 - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	10V
Frequency - Transition:	9GHz
Noise Figure (dB Typ @ f):	1dB ~ 2.5dB @ 1GHz
Gain:	21.5dB
Power - Max:	250mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 5mA, 6V
Current - Collector (Ic) (Max):	50mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-101, SOT-883
Supplier Device Package:	PG-TSLP-3-1

Infineon Technologies BFR949L3E6327