Infineon Technologies-BFR840L3RHESDE6327XTSA1 - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	2.6V
Frequency - Transition:	75GHz
Noise Figure (dB Typ @ f):	0.5dB @ 450MHz
Gain:	27dB
Power - Max:	75mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	150 @ 10mA, 1.8V
Current - Collector (Ic) (Max):	35mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-101, SOT-883
Supplier Device Package:	PG-TSLP-3

Infineon Technologies BFR840L3RHESDE6327XTSA1