Infineon Technologies-BFR750L3RHE6327 - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	4.7V
Frequency - Transition:	37GHz
Noise Figure (dB Typ @ f):	0.6dB ~ 1.1dB @ 1.8GHz ~ 6GHz
Gain:	21dB
Power - Max:	360mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	160 @ 60mA, 3V
Current - Collector (Ic) (Max):	90mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-101, SOT-883
Supplier Device Package:	PG-TSLP-3

Infineon Technologies BFR750L3RHE6327